NANO EDGE ROUGHNESS IN POLYMER RESIST PATTERNS

被引:103
作者
YOSHIMURA, T
SHIRAISHI, H
YAMAMOTO, J
OKAZAKI, S
机构
[1] Central Research Laboratory, Hitachi Ltd., Kokunbunji
关键词
D O I
10.1063/1.109901
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ultrasmall edge roughness in delineated patterns (nano edge roughness) is investigated in nanostructures made of negative-type electron beam polymer resists by atomic force microscope measurements. Very narrow isolated lines 10-20 nm wide are fabricated with a finely focused electron beam provided by a scanning electron microscope. A chemical amplification novolak resin-based resist shows nano edge roughness which cannot be neglected in nanofabrication. To investigate the origin of the roughness, conventional two-component resist systems are microscopically compared. An azide polyvinylphenol-based resist and an azide novolak resin-based resist are used. The novolak resin-based resist exhibits a rougher surface than the polyvinylphenol-based one. This result suggests that the polymer structures of the base resins cause nano edge roughness of a chemical amplification resist in connection with the acid diffusion during the post-exposure bake process.
引用
收藏
页码:764 / 766
页数:3
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