Third-harmonic generation in spherical quantum dots under Deng-Fan-Eckart potential: Effects of hydrostatic pressure, temperature and Al-concentration

被引：0

作者：

Li, Xuechao ^{[1
]}

Duan, Yiming ^{[1
]}

机构：

[1] Anhui Univ Sci & Technol, Sch Mech & Optoelect Phys, Huainan 232001, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2022年 / 144卷

基金：

中国国家自然科学基金;

关键词：

Third-harmonic generation; Quantum dots; Deng-Fan-Eckart potential; Factorization method; Dipole matrix elements;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, third-harmonic generation (THG) of GaAs/Ga1-xAlxAs spherical quantum dots (QDs) affected by Deng-Fan-Eckart (DFE) potential are carefully analyzed for different applied tuning parameters (pressure, temperature and Al-concentration). The eigensolutions of the radial Schrodinger equation are obtained using Factorization method within the effective mass approximation. The results show that the energies and dipole matrix elements are strongly dependent on DFE potential parameters and applied tuning factors. Moreover, we find that these parameters have a significant effect on the position and magnitude of resonant peak of THG coefficient.

引用

页数：7

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