OVERLAPPING ELECTRON TRAPS IN N-TYPE SILICON STUDIED BY CAPACITANCE TRANSIENT SPECTROSCOPY

被引：156
|
作者：
SVENSSON, BG
RYDEN, KH
LEWERENTZ, BMS
机构：
[1] SWEDISH INST MICROELECTR,S-16424 KISTA STOCKHOLM,SWEDEN
[2] SWEDISH DEF RES ESTAB,S-58111 LINKOPING,SWEDEN
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 04期
关键词：
D O I：
10.1063/1.344389
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1699 / 1704
页数：6
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