AFM FABRICATION OF SUB-10-NANOMETER METAL-OXIDE DEVICES WITH IN-SITU CONTROL OF ELECTRICAL-PROPERTIES

被引：244

作者：

SNOW, ES ^{[1
]}

CAMPBELL, PM ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

SCIENCE | 1995年 / 270卷 / 5242期

关键词：

D O I：

10.1126/science.270.5242.1639

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Metal wires and metal-oxide-metal junctions were fabricated by anodic oxidation with the conducting tip of an atomic force microscope (AFM). The width of the wires and resistance of the junctions were controlled by real-time, in situ measurement of the device resistance during fabrication. Because the properties of nanometer-scale devices are very sensitive to size variations, such measurements provide a more accurate method of controlling device properties than by controlling geometry alone. In this way, structures with critical dimensions of less than IO nanometers were fabricated with precisely tailored electrical properties.

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页码：1639 / 1641

页数：3

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