CHARACTERIZATION STUDY OF STRAINED INXGA1-XAS GAAS SUPERLATTICES

被引：2

作者：

DAPKUS, L ^{[1
]}

JASUTIS, V ^{[1
]}

KACIULIS, S ^{[1
]}

LESCINSKAS, D ^{[1
]}

MATTOGNO, G ^{[1
]}

STAKVILEVICIUS, L ^{[1
]}

TREIDERIS, G ^{[1
]}

VITICOLI, S ^{[1
]}

机构：

[1] CNR,IST CHIM MAT,I-00016 ROME,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.358409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xAs/GaAs strained layer superlattices were studied by means of double-crystal x-ray diffractometry (DCXD), transmission electron microscopy (TEM), and selected area x-ray photoelectron spectroscopy (SAXPS) depth profiling techniques. The quality of superlattices, strain in the sublayers, and their thickness and chemical composition were evaluated. The effect of the real superlattice structure on the shape of x-ray rocking curves has been revealed. It was concluded that full identification of nonperiodic defects and the initial stage of stress relaxation can be determined by combining DCXD and TEM methods. The results of SAXPS depth profiling were found to be in good quantitative agreement with DCXD and TEM data. The linear dependence of depth resolution Δz on the sputtering depth, caused by sputtering induced development of heterointerface roughness was determined in SAXPS profiles.

引用

页码：5738 / 5743

页数：6

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