CHARACTERIZATION STUDY OF STRAINED INXGA1-XAS GAAS SUPERLATTICES

被引：2

作者：

DAPKUS, L ^{[1
]}

JASUTIS, V ^{[1
]}

KACIULIS, S ^{[1
]}

LESCINSKAS, D ^{[1
]}

MATTOGNO, G ^{[1
]}

STAKVILEVICIUS, L ^{[1
]}

TREIDERIS, G ^{[1
]}

VITICOLI, S ^{[1
]}

机构：

[1] CNR,IST CHIM MAT,I-00016 ROME,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.358409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xAs/GaAs strained layer superlattices were studied by means of double-crystal x-ray diffractometry (DCXD), transmission electron microscopy (TEM), and selected area x-ray photoelectron spectroscopy (SAXPS) depth profiling techniques. The quality of superlattices, strain in the sublayers, and their thickness and chemical composition were evaluated. The effect of the real superlattice structure on the shape of x-ray rocking curves has been revealed. It was concluded that full identification of nonperiodic defects and the initial stage of stress relaxation can be determined by combining DCXD and TEM methods. The results of SAXPS depth profiling were found to be in good quantitative agreement with DCXD and TEM data. The linear dependence of depth resolution Δz on the sputtering depth, caused by sputtering induced development of heterointerface roughness was determined in SAXPS profiles.

引用

页码：5738 / 5743

页数：6

共 50 条

[31] A STUDY OF LAYER THICKNESS AND INTERFACE QUALITIES OF STRAINED INXGA1-XAS/GAAS LAYERS
HSU, WC
CHANG, SZ
WEI, L
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (01): : 26 - 29
[32] EFFECTS OF THERMAL ANNEALING ON THE CONFINED ELECTRONIC STATES OF INXGA1-XAS GAAS STRAINED-LAYER SUPERLATTICES
IIKAWA, F
MOTISUKE, P
CERDEIRA, F
SACILOTTI, MA
MASUT, RA
ROTH, AP
SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (02) : 273 - 278
[33] PLANAR CHANNELING IN GAAS INXGA1-XAS GAAS STRAINED-LAYER STRUCTURES
STEVENS, JLE
ROBINSON, BJ
DAVIES, JA
THOMPSON, DA
JACKMAN, TE
JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) : 1510 - 1515
[34] New type of misfit dislocation multiplication process in InxGa1-xAs/GaAs strained-layer superlattices
Lefebvre, A.
Herbeaux, C.
Bouillet, C.
Persio, J.Di
Philosophical Magazine Letters, 1991, 63 (01)
[35] GROWTH AND CHARACTERIZATION OF IN0.53GA0.47AS/INXGA1-XAS STRAINED-LAYER SUPERLATTICES
KOHL, A
JUILLAGUET, S
FRAISSE, B
SCHWEDLER, R
ROYO, F
PEYRE, H
BRUGGEMAN, F
WOLTER, K
LEO, K
KURZ, H
CAMASSEL, J
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (2-3): : 244 - 248
[36] A NEW TYPE OF MISFIT DISLOCATION MULTIPLICATION PROCESS IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
LEFEBVRE, A
HERBEAUX, C
BOUILLET, C
DIPERSIO, J
PHILOSOPHICAL MAGAZINE LETTERS, 1991, 63 (01) : 23 - 29
[37] XPS STUDY OF THE INXGA1-XAS/GAAS SUPERLATTICE
KACIULIS, S
MATTOGNO, G
TREIDERIS, G
VITICOLI, S
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1994, 70 (02) : 145 - 149
[38] DIELECTRIC FUNCTIONS AND CRITICAL-POINTS OF STRAINED INXGA1-XAS ON GAAS
PICKERING, C
CARLINE, RT
EMENY, MT
GARAWAL, NS
HOWARD, LK
APPLIED PHYSICS LETTERS, 1992, 60 (19) : 2412 - 2414
[39] DIAMAGNETIC SHIFT IN INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS
HOU, HQ
STAGUHN, W
TAKEYAMA, S
MIURA, N
SEGAWA, Y
AOYAGI, Y
NAMBA, S
PHYSICAL REVIEW B, 1991, 43 (05): : 4152 - 4157
[40] PHOTOMODULATION STUDY OF PARTIALLY STRAINED INXGA1-XAS LAYERS
CHEN, JH
CHI, WS
HUANG, YS
YIN, Y
POLLAK, FH
PETTIT, GD
WOODALL, JM
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (07) : 1420 - 1425

← 1 2 3 4 5 →