NONADDITIVE PHOTOCONDUCTIVITY OF GAAS P-I-N STRUCTURES UNDER COMBINED EXCITATION CONDITIONS

被引：0
作者：
GUTKIN, AA
KHOLEV, BA
SHAPOSHN.TA
LEBEDEV, AA
KAGAN, MB
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1972年 / 6卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：204 / &
相关论文
共 50 条
[41]   MOVPE growth and characterization of GaAs/GaAsBi/GaAs p-i-n structure [J].
Ben Abdelwahed, A. ;
Zouaghi, S. ;
Fitouri, H. ;
Rebey, A. .
OPTICAL MATERIALS, 2024, 155
[42]   Investigation of MQW GaInNAs/GaAs p-i-n photodetector [J].
Khalil, Hagir M. ;
Balkan, N. ;
Mazzucato, S. .
NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, :159-162
[43]   SPICE model of P-i-N photodiode for heaveside excitation [J].
Lazovic, MV ;
Matavulj, PS .
Eurocon 2005: The International Conference on Computer as a Tool, Vol 1 and 2 , Proceedings, 2005, :875-878
[44]   Theoretical study of a GaAs lateral p-i-n photodetector [J].
Haralson, JN ;
Parks, JW ;
Brennan, KF .
APPLIED PHYSICS LETTERS, 1998, 72 (13) :1641-1643
[45]   Design considerations for p-i-n thyristor structures [J].
Dutta, Ranadeep ;
Rothwarf, Allen .
IEEE Transactions on Power Electronics, 1992, 7 (02) :430-435
[46]   Discrete waveguide attenuate on p-i-n structures [J].
Ivanyuta, O. M. ;
Kishenko, Ya. I. ;
Prokopenko, O. V. .
SIXTH INT KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES/WORKSHOP ON TERAHERTZ TECHNOLOGIES, VOLS 1 AND 2, 2007, :716-+
[47]   MICROPLASMAS IN PERFECTLY HOMOGENEOUS P-I-N STRUCTURES [J].
GAFIICHUK, VV ;
DATSKO, BI ;
KERNER, BS ;
OSIPOV, VV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (04) :455-459
[48]   Avalanche breakdown field in p-i-n structures [J].
Kholodnov, VA .
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 1998, 43 (10) :1166-1169
[49]   Double injection in graphene p-i-n structures [J].
Ryzhii, V. ;
Semenikhin, I. ;
Ryzhii, M. ;
Svintsov, D. ;
Vyurkov, V. ;
Satou, A. ;
Otsuji, T. .
JOURNAL OF APPLIED PHYSICS, 2013, 113 (24)
[50]   Double injection in graphene p-i-n structures [J].
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan ;
不详 ;
不详 .
1600, American Institute of Physics Inc. (113)
12345