INVESTIGATION OF ELECTROTRANSPORT OF HOLES IN HYDROGENATED AMORPHOUS-SILICON BY THE METHOD OF THE PHOTOCURRENT-VOLTAGE CHARACTERISTICS

被引：0

作者：

GOLIKOVA, OA

IKRAMOV, RG

KAZANIN, MM

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An analysis of the photocurrent-voltage characteristics of Schottky-barrier and p-i-n structures yielded the values of the product mu-tau for holes in a-Si:H and the density of localized states g(epsilon). The dependence of mu-tau on the Fermi level position in the mobility gap was determined.

引用

页码：40 / 41

页数：2