GROWTH OF CUBIC PHASE GALLIUM NITRIDE BY MODIFIED MOLECULAR-BEAM EPITAXY

被引：336

作者：

PAISLEY, MJ

SITAR, Z

POSTHILL, JB

DAVIS, RF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575869

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：701 / 705

页数：5

共 19 条

[11]

McCarroll B., 1970, Review of Scientific Instruments, V41, P279, DOI 10.1063/1.1684492

MIZUTA, M ;

FUJIEDA, S ;

MATSUMOTO, Y ;

KAWAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12) :L945-L948

[13]

PAISLEY MJ, 1988, P SOC PHOTO-OPT INS, V8, P877

[14]

Pankove J. I., 1973, Journal of Luminescence, V7, P114, DOI 10.1016/0022-2313(73)90062-8

[15]

PANKOVE JI, 1975, RCA REV, V36, P163

[16]

POSTHILL JB, 1988, 46TH P ANN M EL MICR, P896

[17]

Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]

[18] MICROTWIN MORPHOLOGY AND VOLUME FRACTION FOR SILICON ON SAPPHIRE [J].

TWIGG, ME ;

RICHMOND, ED .

[19]

WERHEIMER MR, 1985, J VAC SCI TECHNOL A, V3, P2643