GROWTH OF CUBIC PHASE GALLIUM NITRIDE BY MODIFIED MOLECULAR-BEAM EPITAXY

[11] McCarroll B., 1970, Review of Scientific Instruments, V41, P279, DOI 10.1063/1.1684492

[12] LOW-TEMPERATURE GROWTH OF GAN AND ALN ON GAAS UTILIZING METALORGANICS AND HYDRAZINE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L945 - L948

[13] PAISLEY MJ, 1988, P SOC PHOTO-OPT INS, V8, P877

[14] Pankove J. I., 1973, Journal of Luminescence, V7, P114, DOI 10.1016/0022-2313(73)90062-8

[15] PANKOVE JI, 1975, RCA REV, V36, P163

[16] POSTHILL JB, 1988, 46TH P ANN M EL MICR, P896

[17] Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]

[18] MICROTWIN MORPHOLOGY AND VOLUME FRACTION FOR SILICON ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3037 - 3042

[19] WERHEIMER MR, 1985, J VAC SCI TECHNOL A, V3, P2643

[11] McCarroll B., 1970, Review of Scientific Instruments, V41, P279, DOI 10.1063/1.1684492

[12] LOW-TEMPERATURE GROWTH OF GAN AND ALN ON GAAS UTILIZING METALORGANICS AND HYDRAZINE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L945 - L948

[13] PAISLEY MJ, 1988, P SOC PHOTO-OPT INS, V8, P877

[14] Pankove J. I., 1973, Journal of Luminescence, V7, P114, DOI 10.1016/0022-2313(73)90062-8

[15] PANKOVE JI, 1975, RCA REV, V36, P163

[16] POSTHILL JB, 1988, 46TH P ANN M EL MICR, P896

[17] Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]

[18] MICROTWIN MORPHOLOGY AND VOLUME FRACTION FOR SILICON ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3037 - 3042

[19] WERHEIMER MR, 1985, J VAC SCI TECHNOL A, V3, P2643