GROWTH OF CUBIC PHASE GALLIUM NITRIDE BY MODIFIED MOLECULAR-BEAM EPITAXY

被引：336

作者：

PAISLEY, MJ

SITAR, Z

POSTHILL, JB

DAVIS, RF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575869

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：701 / 705

页数：5

共 19 条

[1] THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].

BRAVMAN, JC ;

SINCLAIR, R .

JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01) :53-61

[2]

Carter C. H. Jr., 1986, Journal of Materials Research, V1, P811, DOI 10.1557/JMR.1986.0811

[3]

DAS K, 1976, SOLID STATE ELECTRON, V19, P851

[4] THE BETA-SIC(100) SURFACE STUDIED BY LOW-ENERGY ELECTRON-DIFFRACTION, AUGER-ELECTRON SPECTROSCOPY, AND ELECTRON-ENERGY LOSS SPECTRA [J].

DAYAN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (01) :38-45

[5]

DAYAN M, 1985, J VAC SCI TECHNOL A, V3, P361, DOI 10.1116/1.573221

[6] MICROWAVE DISCHARGE CAVITIES OPERATING AT 2450 MHZ [J].

FEHSENFELD, FC ;

EVENSON, KM ;

BROIDA, HP .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (03) :294-+

[7] ANALYSIS OF INDIUM NITRIDE SURFACE OXIDATION [J].

FOLEY, CP ;

LYNGDAL, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1708-1712

[8] ATOMIC LAYER EPITAXY [J].

GOODMAN, CHL ;

PESSA, MV .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :R65-R81

[9]

KOLTS JH, 1979, REACTIVE INTERMEDIAT

[10] MICROSTRUCTURE OF EPITAXIAL AG/SI(111) AND AG/SI(100) INTERFACES [J].

LEGOUES, FK ;

LIEHR, M ;

RENIER, M ;

KRAKOW, W .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (02) :179-189

← 1 2 →