GAAS PHOTOCONDUCTIVE CLOSING SWITCHES WITH HIGH DARK RESISTANCE AND MICROSECOND CONDUCTIVITY DECAY

被引：14

作者：

MAZZOLA, MS ^{[1
]}

SCHOENBACH, KH ^{[1
]}

LAKDAWALA, VK ^{[1
]}

GERMER, R ^{[1
]}

LOUBRIEL, GM ^{[1
]}

ZUTAVERN, FJ ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.100879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：742 / 744

页数：3

共 9 条

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[2]

KO SH, UNPUB

[3] COPPER-RELATED DEEP LEVEL DEFECTS IN III-V-SEMICONDUCTORS [J].

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[4]

LEE CH, 1984, PICOSECOND OPTOELECT, P374

[5]

LOUBRIEL G, UNPUB

[6]

LOUBRIEL GM, 1988, 18TH P IEEE POW MOD, P312

[7]

Petr R. A., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V871, P297, DOI 10.1117/12.943680

[8]

SCHOENBACH K, 1988, 18TH C REC POW MOD S, P318

[9] AN OPTICALLY CONTROLLED CLOSING AND OPENING SEMICONDUCTOR SWITCH [J].

SCHOENBACH, KH ;

LAKDAWALA, VK ;

GERMER, R ;

KO, ST .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2460-2463

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