GROWTH OF INSB AND INAS1-XSBX ON GAAS BY MOLECULAR-BEAM EPITAXY

被引：104

作者：

CHYI, JI ^{[1
]}

KALEM, S ^{[1
]}

KUMAR, NS ^{[1
]}

LITTON, CW ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.100031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1092 / 1094

页数：3

共 14 条

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[4]

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