IONIZATION MECHANISMS OF SHALLOW DONOR IMPURITY CENTERS IN SEMICONDUCTORS IN AN EXTERNAL ELECTRIC FIELD WITH ALLOWANCE FOR PLASMA SCREENING

被引：0

作者：

KATANA, PK

TIRON, SD

CHEBAN, AG

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 4卷 / 02期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：210 / +

页数：1

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[2]

BONCHBRUEVICH VL, 1964, FIZ TVERD TELA, V6, P2047

[3]

BROOKS H, 1951, PHYS REV, V83, P879

[4]

CHEBAN AG, 1966, FIZ TVERD TELA+, V7, P2213

[5]

CHEBAN AG, 1965, FIZ TVERD TELA, V7, P2735

[6]

FRANZ W, 1956, HDB PHYSIK, V17, P155

[7]

Hilsum C., 1961, SEMICONDUCTING 3 5 C

[8]

Katana P. K., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P260

[9] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320