SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N

被引：52
作者：
HOLONYAK, N
DUPUIS, RD
MACKSEY, HM
GROVES, WO
CRAFORD, MG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 10期
关键词：
D O I：
10.1063/1.1660889
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4148 / &
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[2]   RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].
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[4]  
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[5]  
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APPLIED PHYSICS LETTERS, 1971, 19 (06) :184-&
[7]   ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS [J].
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[8]   WINDOW-HEAT SINK SANDWICH FOR OPTICAL EXPERIMENTS - DIAMOND (OR SAPPHIRE)-SEMICONDUCTOR-INDIUM SANDWICH [J].
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[9]   STIMULATED EMISSION IN AN INDIRECT SEMICONDUCTOR - N ISOELECTRONIC TRAP-ASSISTED RECOMBINATION IN GAAS1-XPX,X GREATER THAN 0.44) [J].
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APPLIED PHYSICS LETTERS, 1971, 19 (08) :256-&
[10]   STIMULATED EMISSION INVOLVING NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX [J].
HOLONYAK, N ;
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