Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells

被引：2

作者：

Jeong, Myung-Il ^{[1
]}

Choi, Chel-Jong ^{[1
]}

机构：

[1] Chonbuk Natl Univ, SPRC, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

来源：

JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY | 2014年 / 24卷 / 01期

关键词：

SiNx; SiO2; Passivation; Crystalline Si solar cells; Interface trap density;

D O I：

10.6111/JKCGCT.2014.24.1.041

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the passivation property of SiNx and SiO2 thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of SiNx deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The SiO2 thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality SiO2 thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.

引用

页码：41 / 45

页数：5

共 50 条

[1] Emission and optical properties of SiO2/Si thin films
Tashmukhamedova D.A.
Yusupjanova M.B.
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2016, 10 (6) : 1273 - 1275
[2] Effective Passivation of Large Area Black Silicon Solar Cells by SiO2/SiNx:H Stacks
Zhao, Zengchao
Zhang, Bingye
Li, Ping
Guo, Wan
Liu, Aimin
INTERNATIONAL JOURNAL OF PHOTOENERGY, 2014, 2014
[3] Photoluminescence of Si/SiO2 and SiNx/SiO2 multilayers
Institute of Solid State Physics, School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China
不详
Bandaoti Guangdian, 2007, 5 (680-684):
[4] A DLTS Study of SiO2 and SiO2/SiNx Surface Passivation of Silicon
Simoen, E.
Gong, C.
Posthuma, N. E.
Van Kerschaver, E.
Poortmans, J.
Mertens, R.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (06) : H612 - H617
[5] Highly moisture-resistive SiNx films by catalytic chemical vapor deposition and their application to passivation and antireflection coating for crystalline Si solar cells
Matsumura, H
Kikkawa, A
Tsutsumi, T
Masuda, A
Izumi, A
Takahashi, M
Ohtsuka, H
Moschner, JD
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1147 - 1150
[6] Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks
Chen, J.
Cornagliotti, E.
Loozen, X.
Simoen, E.
Vanhellemont, J.
Lauwaert, J.
Vrielinck, H.
Poortmans, J.
JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)
[7] Study of SiNx and SiO2 passivation of GaN surfaces
Chevtchenko, S. A.
Reshchikov, M. A.
Fan, Q.
Ni, X.
Moon, Y. T.
Baski, A. A.
Morkoc, H.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)
[8] Study of SiNx and SiO2 passivation of GaN surfaces
Chevtchenko, S.A.
Reshchikov, M.A.
Fan, Q.
Ni, X.
Moon, Y.T.
Baski, A.A.
Morko¸, H.
Journal of Applied Physics, 2007, 101 (11):
[9] Application of SiO2 passivation technique in mass production of silicon solar cells
Zhuang, Y. F.
Zhong, S. H.
Liang, X. J.
Kang, H. J.
Li, Z. P.
Shen, W. Z.
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2019, 193 : 379 - 386
[10] Evaluation of SiNx Passivation with Plasma Treatment for Crystalline Si Solar Cell
Hiyama, T.
Kojima, T.
Yamashita, Y.
Ogura, A.
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 2905 - 2909

← 1 2 3 4 5 →