AUTODOPING REDUCTION IN SILICON EPITAXY ON HIGH-CONCENTRATION BURIED LAYERS

被引：0

作者：

NAGAO, S ^{[1
]}

OHNO, N ^{[1
]}

KAYANO, S ^{[1
]}

KIJIMA, K ^{[1
]}

机构：

[1] COMP DEV LAB,ITAMI,HYOGO,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C368 / C368

页数：1

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