AUTODOPING REDUCTION IN SILICON EPITAXY ON HIGH-CONCENTRATION BURIED LAYERS

被引：0
|
作者：
NAGAO, S [1 ]
OHNO, N [1 ]
KAYANO, S [1 ]
KIJIMA, K [1 ]
机构：
[1] COMP DEV LAB,ITAMI,HYOGO,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C368 / C368
页数：1
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