AUTODOPING REDUCTION IN SILICON EPITAXY ON HIGH-CONCENTRATION BURIED LAYERS

被引：0

作者：

NAGAO, S ^{[1
]}

OHNO, N ^{[1
]}

KAYANO, S ^{[1
]}

KIJIMA, K ^{[1
]}

机构：

[1] COMP DEV LAB,ITAMI,HYOGO,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C368 / C368

页数：1

共 50 条

[11] RECENT DEVELOPMENTS IN THE MODELING OF AUTODOPING IN CVD SILICON EPITAXY
REIF, R
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C318 - C318
[12] AUTODOPING OF EPITAXIAL SILICON LAYERS .2. DIFFUSION-INDUCED AUTODOPING
KUHNE, H
GAWORZEWSKI, P
MALZE, W
CRYSTAL RESEARCH AND TECHNOLOGY, 1985, 20 (05) : 635 - 644
[13] ANTIMONY, ARSENIC, PHOSPHORUS, AND BORON AUTODOPING IN SILICON EPITAXY
GRAEF, MWM
LEUNISSEN, BJH
DEMOOR, HHC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1942 - 1954
[14] AUTODOPING OF ANTIMONY AND ARSENIC IN SILICON EPITAXIAL LAYERS
KATONA, P
THIN SOLID FILMS, 1983, 100 (01) : 9 - 15
[15] GROWTH OF SILICON EPITAXY OVER ION-IMPLANTED BURIED LAYERS
KANNAN, VC
ROPER, G
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C120 - C120
[16] AVALANCHE BREAKDOWN IN SILICON WITH A HIGH-CONCENTRATION OF OXYGEN
GREKHOV, IV
SEREZHKI.YN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1902 - +
[17] EXTREMELY HIGH-CONCENTRATION DOPANT DIFFUSION IN SILICON
KING, JR
IMA JOURNAL OF APPLIED MATHEMATICS, 1988, 40 (03) : 163 - 181
[18] KINETIC-THEORY OF AUTODOPING IN REDUCED PRESSURE EPITAXY OF SILICON
ONUKI, M
NISHIKAWA, A
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 93 - 100
[19] A TRAPPING MECHANISM FOR AUTODOPING IN SILICON EPITAXY .1. THEORY
WONG, M
REIF, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 83 - 88
[20] Suppression of lateral autodoping from arsenic buried layer by selective epitaxy capping
Chiu, Tzu-Yin
Lee, Kwing F.
Lau, Maureen Y.
Finegan, Sean N.
Morris, Mark D.
Voshchenkov, Alexander M.
1600, (11):

← 1 2 3 4 5 →