Optical properties of AlxIn1-xP ternary semiconductor alloys

被引：2

作者：

Mezrag, Fadila ^{[1
]}

Bouarissa, Nadir ^{[1
]}

机构：

[1] Univ Msila, Lab Mat Phys & Its Applicat, Msila 28000, Algeria

来源：

JOURNAL OF COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING | 2018年 / 18卷 / 01期

关键词：

Energy gaps; dielectric constants; refractive index; ternary alloys; pseudopotentials;

D O I：

10.3233/JCM-170774

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a study of optical properties, namely the optical band gaps, the refractive index and the high-frequency and static dielectric constants of zinc-blende AlxIn1-xP ternary semiconductor alloys. The calculations are mainly based on the pseudopotential approach under a modified virtual crystal approximation that takes into account the effect of compositional disorder. The composition dependence of the band parameters of interest has been examined and discussed. The material system under consideration is found to be a direct band-gap semiconductor within the composition range 0 <= x <= 0.4 and an indirect band-gap semiconductor for 0.4 < x <= 1. A good agreement is noticed between our results and the available experimental and theoretical data quoted in the literature.

引用

页码：299 / 305

页数：7

共 27 条

[1] BAND-GAPS AND REFRACTIVE-INDEXES OF ALGAASSB, GAINASSB, AND INPASSB - KEY PROPERTIES FOR A VARIETY OF THE 2-4-MU-M OPTOELECTRONIC DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4869-4876

[2]

Adachi S, 2005, WILEY SER MATER ELEC, P1, DOI 10.1002/0470090340

[3]

Adachi S., JAPN J APPL PHYS

[4]

Adachi S, 1992, PHYS PROPERTIES 3 4

[5] Electronic band structure and derived properties of AlAsxSb1-x alloys [J].

Al-Assiri, M. S. ;

Bouarissa, N. .

SUPERLATTICES AND MICROSTRUCTURES, 2013, 59 :144-154

[6]

[Anonymous], 1993, B COLL MED SCI TOHOK

[7] Energy band gaps for the GaxIn1-xAsyP1-y alloys lattice matched to different substrates [J].

Bechiri, A. ;

Bouarissa, N. .

SUPERLATTICES AND MICROSTRUCTURES, 2006, 39 (06) :478-488

[8] Band structure of III-V ternary semiconductor alloys beyond the VCA [J].

Bechiri, A ;

Benmakhlouf, F ;

Bouarissa, N .

MATERIALS CHEMISTRY AND PHYSICS, 2003, 77 (02) :507-510

[9] Effects of compositional disorder upon electronic and lattice properties of GaxIn1-xAs [J].

Bouarissa, N .

PHYSICS LETTERS A, 1998, 245 (3-4) :285-291

[10] Pseudopotential calculations of Cd1-xZnxTe:: Energy gaps and dielectric constants [J].

Bouarissa, Nadir .

PHYSICA B-CONDENSED MATTER, 2007, 399 (02) :126-131

← 1 2 3 →