ON THE PROBLEM OF WATKINS SUBSTITUTION AND MIGRATION OF SILICON ATOMS IN SILICON

被引：8

作者：

BEREZHNOV, NI ^{[1
]}

CHELYADINSKII, AR ^{[1
]}

JADAN, M ^{[1
]}

SUPRUNBELEVICH, YR ^{[1
]}

机构：

[1] BYELORUSSIAN STATE UNIV, DEPT PHYS, SKARINA AVE 4, MINSK 220080, BELARUS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 73卷 / 03期

关键词：

D O I：

10.1016/0168-583X(93)95751-P

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Displacement of B, P, Sb and As atoms out of the crystal lattice sites of ion-implanted silicon by interstitial silicon atoms generated during annealing of interstitial complexes has been investigated. It has been revealed that the efficiency of the displacement is determined by the magnitude of the discrepancy between the covalent radii of the dopant atoms and silicon. A model of athermal movement of the interstitial Si atom in the field of elastic deformation of the crystal lattice caused by the dopant substitutional atoms has been proposed.

引用

页码：357 / 361

页数：5

共 12 条

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[2]

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[4]

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[8]

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[9]

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[10]

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