REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS

被引：575
作者：
MURARKA, SP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 04期
关键词：
D O I：
10.1116/1.570560
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：775 / 792
页数：18
相关论文
共 72 条
[1]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[2]  
Aronsson B., 1965, BORIDES SILICIDES PH
[3]  
ARONSSON B, 1960, ARK KEMI, V16, P379
[4]   ENHANCED OXIDATION OF MOLYBDENUM DISILICIDE UNDER TENSILE STRESS - RELATION TO PEST MECHANISMS [J].
BERKOWIT.JB ;
ROSSETTI, M ;
LEE, DW .
METALLURGICAL TRANSACTIONS, 1970, 1 (02) :479-&
[5]  
CHANG CC, UNPUBLISHED
[6]  
CHIU KW, UNPUBLISHED
[7]   1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].
CROWDER, BL ;
ZIRINSKY, S .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :291-293
[8]  
ELLIOTT RP, 1965, CONSTITUTION BINARY
[9]  
FERRIS SD, 1979, 1978 P C LAS SOL INT
[10]  
FITZER E, 1956, 2ND PLANS P SEM REUT
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