ELECTRON-CYCLOTRON RESONANCE HYDROGEN AND NITROGEN PLASMA SURFACE PASSIVATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：19
作者：
WANG, Q
YANG, ES
LI, PW
LU, Z
OSGOOD, RM
WANG, WI
机构：
[1] Department of Electrical Engineering, Columbia University, New York, NY.
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 02期
关键词：
D O I：
10.1109/55.144966
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first experiment of electron cyclotron resonance (ECR) hydrogen (H) and nitrogen (N) plasma surface passivation on the AlGaAs/GaAs heterojunction bipolar transistor (HBT). As a result of the plasma processing, the base current ideality factor is improved from 2.67 to 1.96, and the maximum current gain is increased from 720 to 1000. In the low-current regime, the base current is reduced by two orders of magnitude. The nitride layer grown by nitrogen plasma passivates the GaAs surface and appears to be thermally stable without significant degradation.
引用
收藏
页码：83 / 85
页数：3
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