REGROWTH OF AMORPHOUS LAYERS CREATED BY HIGH-DOSE ANTIMONY IMPLANTATION IN 100 SILICON

被引：15
|
作者：
TAMMINGA, Y [1 ]
JOSQUIN, WJM [1 ]
机构：
[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
来源：
APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 01期
关键词：
D O I：
10.1063/1.89828
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：13 / 15
页数：3
相关论文
共 50 条
  • [21] EFFECTS OF HIGH-DOSE FLUORINE IMPLANTATION INTO SILICON
    WONG, SP
    WILSON, IH
    CHEUNG, WY
    MOK, WK
    HARK, SK
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 67 (1-4): : 481 - 485
  • [22] NEAR-SURFACE REGROWTH RATE EFFECTS IN HIGH-DOSE ION-IMPLANTED (100) SILICON
    WILLIAMS, JS
    ELLIMAN, RG
    APPLIED PHYSICS LETTERS, 1980, 37 (09) : 829 - 831
  • [23] VOLUME CHANGES OF SILICON THIN SURFACE-LAYERS DURING HIGH-DOSE OXYGEN IMPLANTATION
    GRNO, J
    BEDERKA, S
    VESELY, M
    MATES, P
    THIN SOLID FILMS, 1984, 111 (01) : 59 - 64
  • [24] HIGH-CURRENT AND HIGH-DOSE PHOSPHORUS IMPLANTATION IN SILICON
    TAMURA, M
    YAGI, K
    SAKUDO, N
    TOKIGUTI, K
    TOKUYAMA, T
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 109 - 114
  • [25] HIGH-DOSE URANIUM ION-IMPLANTATION INTO SILICON
    BROWN, IG
    GALVIN, JE
    YU, KM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 31 (04): : 558 - 562
  • [26] MODEL INVESTIGATIONS OF THE OXIDATION OF SILICON BY HIGH-DOSE IMPLANTATION
    JAGER, HU
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6): : 748 - 751
  • [27] On the high-dose effect in the case of ion implantation of silicon
    D. I. Tetelbaum
    A. I. Gerasimov
    Semiconductors, 2004, 38 : 1260 - 1262
  • [28] HIGH-DOSE IMPLANTATION OF MEV CARBON ION INTO SILICON
    CHAYAHARA, A
    KIUCHI, M
    HORINO, Y
    FUJII, K
    SATOU, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (01): : 139 - 140
  • [29] A MODEL FOR THE OXIDATION OF SILICON BY HIGH-DOSE OXYGEN IMPLANTATION
    JAGER, HU
    HENSEL, E
    KREISSIG, U
    SKORUPA, W
    SOBESLAVSKY, E
    THIN SOLID FILMS, 1985, 127 (1-2) : 159 - 169
  • [30] On the high-dose effect in the case of ion implantation of silicon
    Tetelbaum, DI
    Gerasimov, AI
    SEMICONDUCTORS, 2004, 38 (11) : 1260 - 1262
12345