A NEW ENERGY-MODEL FOR THE CALCULATION OF THE SURFACE RECONSTRUCTION OF III-V SEMICONDUCTORS - APPLICATION TO THE GAAS(110) SURFACE

被引：5
|
作者：
TOET, SE
LENSTRA, D
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 43卷 / 02期
关键词：
D O I：
10.1007/BF00617957
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：85 / 89
页数：5
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