TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY

被引：42
作者：
CHENG, KY
CHO, AY
WAGNER, WR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 10期
关键词：
D O I：
10.1063/1.328537
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：6328 / 6330
页数：3
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