SOME PHYSICAL-PROPERTIES OF THE COMPOUNDS CUINSETE, CUINSES AND CUINSTE THIN-FILMS

The structure, electrical conductivity and Hall coefficient of CulnSeTe, CulnSeS and CulnSTe thin films were measured in the temperature range 100-450K. These compounds have been structurally investigated by X-rays diffraction technique. It was found that all the phases of these materials have chalcopyrite type unit cell with (a = 5.94 angstrom, c = 12.13 angstrom) for CulnSeTe (a = 5.7 angstrom, c = 11.52 angstrom) for CulnSeS and (a = 5.5 2 angstrom, c = 11.08 angstrom) for CulnSTe. It was found that the thin films evaporated at rates from 60 to 80 angstrom S-1 have better, electrical properties than the films grown at higher evaporation rates. The d.c. conductivity and the mobility data were analysed assuming scattering by grain boundary and ionized impurities. The calculated values of the carrier concentration were found to be 2.06 x 10(19), 9.64 x 10(17) and 5.5 x 10(18) cm-3 for CulnSeTe, CulnSeS and CulnSTe thin films respectively.