ELECTRON-SCATTERING BY LOCALIZED IMPURITY POTENTIALS IN COMPENSATED GAAS

被引：13

作者：

CHATTOPADHYAY, D

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.23.2956

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2956 / 2959

页数：4

共 17 条

[1]

[Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2

[2] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1968, 175 (03) :991-&

[3] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS [J].

JERVIS, TR .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (02) :K199-K202

[4] OPTICAL DETERMINATION OF IMPURITY COMPENSATION IN NORMAL-TYPE GALLIUM-ARSENIDE [J].

KAMIYA, T ;

WAGNER, E .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1928-1934

[5] HALL-EFFECT, SCHOTTKY-BARRIER CAPACITANCE, AND PHOTOLUMINESCENCE SPECTRA MEASUREMENTS FOR GAAS EPITAXIAL LAYER AND THEIR CORRELATION [J].

KATODA, T ;

SUGANO, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) :1066-1073

[6] IMPROVED PROPERTIES OF MELT-GROWN GAAS BY SHORT-TIME HEAT-TREATMENT [J].

KUSHIRO, Y ;

SEIMIYA, T ;

SINBORI, O ;

KOBAYASI, T .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1636-1645

[7]

MAIER M, COMMUNICATION

[8]

NAG B, 1980, ELECTRON TRANSPORT C

[9]

NAG BR, 1972, THEORY ELECTRICAL TR

[10] ROLE OF SPACE-CHARGE SCATTERING IN EPITAXIAL GAAS [J].

PODOR, B ;

NADOR, N ;

BERTOTI, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01) :173-182

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