EXPERIMENTAL-EVIDENCE OF 2 SPECIES OF RADIATION-INDUCED TRAPPED POSITIVE CHARGE

被引：39

作者：

FREITAG, RK

BROWN, DB

DOZIER, CM

机构：

[1] Naval Research Laboratory, Washington, D.C.

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of alternating bias anneals of MOS transistors following either x-irradiation or Fowler-Nordheim Tunneling have been studied. It is found that some of the generated defects can be repeatedly charged and discharged with a change of applied oxide field. Two models to explain this phenomenon are discussed. One assumes a single defect, the E' center. The other model assumes a two defect model. The results of this work are shown to be more consistent with the two defect model.

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页码：1316 / 1322

页数：7

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