FAST DIFFUSION OF ELEVATED-TEMPERATURE ION-IMPLANTED SE IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY

被引：20

作者：

LIDOW, A

GIBBONS, JF

DELINE, VR

EVANS, CA

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,SCH CHEM SCI,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 03期

关键词：

D O I：

10.1063/1.89963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：149 / 151

页数：3

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[1] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J].

LIDOW, A ;

GIBBONS, JF ;

MAGEE, T .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :158-161

[2] EFFECTS OF IMPLANTATION TEMPERATURE ON LATTICE LOCATION OF TELLURIUM IMPLANTED IN GALLIUM-ARSENIDE [J].

TAKAI, M ;

GAMO, K ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (12) :1926-1930

[3] DEPTH PROFILE DETECTION LIMIT OF 3X10(15) ATOM CM-3 FOR AS IN SI USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY [J].

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :559-561

[4] EVALUATION OF A CESIUM PRIMARY ION-SOURCE ON AN ION MICROPROBE MASS-SPECTROMETER [J].

WILLIAMS, P ;

LEWIS, RK ;

EVANS, CA ;

HANLEY, PR .

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