CROSS SHAPED PATTERN ON CHROME MASK FOR 0.5 MU-M CONTACT HOLE FABRICATION

被引：0

作者：

LOONG, WA

SHY, SL

GUO, GC

YANG, MT

SU, SY

机构：

[1] Institute of Applied Chemistry, National Chiao Tung University, Hsinchu

[2] Nano device laboratory, Hsinchu

[3] United Microelectronics Corporation, Hsinchu

[4] Department of Electronics Engineering, National Chiao Tung University, Hsinchu

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)90131-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a cross shaped pattern on a chrome mask for the fabrication of 0.5 mu m contact hole. Based on simulation, in comparison to the conventional 0.5 mu m square mask, the contrast of aerial image of this mask gained 1.41 % at no defocus; 8.81 % at defocus 1.5 mu m. Exposure latitude gained 22.8 % under no defocus. From the experimental pattern transfer studies on positive tone photoresist using i-line 5X stepper, this mask has an useful focus range of -1.2 similar to +1.2 mu m while conventional has a range of -0.6 similar to +0.9 mu m. The drawback is that exposure dose needed is 1.2 similar to 1.5 times higher than conventional mask in our study.

引用

页码：175 / 178

页数：4