CYCLOTRON-RESONANCE IN GE LAYERS OF GE1-XSIX-GE STRAINED HETEROSTRUCTURES

被引：3

作者：

GAVRILENKO, VI ^{[1
]}

KOZLOV, IN ^{[1
]}

MOLDAVSKAYA, MD ^{[1
]}

NIKONOROV, VV ^{[1
]}

ORLOV, LK ^{[1
]}

KUZNETSOV, OA ^{[1
]}

CHERNOV, AL ^{[1
]}

机构：

[1] NIZHNY NOVGOROD STATE UNIV,INST PHYS TECH,NIZHNII NOVGOROD 603600,RUSSIA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4B期

关键词：

CYCLOTRON RESONANCE; STRAINED HETEROSTRUCTURES;

D O I：

10.1143/JJAP.33.2386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cyclotron resonance of photoexcited carriers in Ge/Ge1-xSix multilayer strained undoped heterostructures (HSs) was investigated for the first time. Cyclotron resonance line of positive charge carriers with the effective mass m(c) almost-equal-to 0.07 m0 corresponding to that of holes in the upper subband in the strained quantum wells in Ge layers was observed in the absorption and mm-photoconductivity spectra. The persistent photoconductivity is shown to arise after interband illumination owing to the free holes remaining in the sample.

引用

页码：2386 / 2387

页数：2

共 13 条

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