New Insulating Material for YBa2Cu3Ox/Insulator/YBa2Cu3Ox Tunnel Junctions

被引：1

作者：

Tazoh, Yasuo ^{[1
]}

Mukaida, Masashi ^{[1
]}

Miyazawa, Shintaro ^{[1
]}

机构：

[1] NTT LSI Labs, Atsugi, Kanagawa 24301, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1994年 / 235-40卷

关键词：

D O I：

10.1016/0921-4534(94)91198-3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BaSnO3 is proposed as a new insulating material for YBCO-SIS tunnel junctions from the viewpoint of the superconducting behavior of a layer-structured YBCO. YBCO and BaSnO3 thin films were grown in-situ by a reactive co-evaporation in oxygen radicals. XRD, AFM, and RHEED observations confirm that (001) oriented YBCO and (100) oriented BaSnO3 thin films grow epitaxially on each other. Cross-sectional TEM observations reveal that about 4 nm thick BaSnO3 thin films perfectly cover the lower YBCO thin film surface steps with a height of one unit cell length of YBCO. T-c of the lower and upper YBCO thin films is higher than 80 K.

引用

页码：3343 / 3344

页数：2