EFFECTS OF GROWN-IN AND PROCESS-INDUCED DEFECTS IN SINGLE-CRYSTAL SILICON

被引：38

作者：

POMERANTZ, DI

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 02期

关键词：

D O I：

10.1149/1.2404171

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：255 / +

页数：1

共 24 条

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EDWARDS, WD .

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[9] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J].

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[10]

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