INTERBAND ABSORPTION OF LIGHT IN STRONGLY DOPED SEMICONDUCTORS

被引：0
作者：
SHKLOVSKII, BI
EFROS, AL
机构：
来源：
SOVIET PHYSICS JETP-USSR | 1971年 / 32卷 / 04期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：733 / +
页数：1
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