FERMI LEVEL MOVEMENT FOR NORMAL-GAAS AND PARA-GAAS INTERFACES - EFFECTS OF TEMPERATURE AND DOPANT CONCENTRATION

被引：8
作者：
ANDERSON, SG
ALDAO, CM
WADDILL, GD
VITOMIROV, IM
CAPASSO, C
WEAVER, JH
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 24期
关键词：
D O I：
10.1063/1.101977
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2547 / 2549
页数：3
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