FAR INFRARED-EMISSION FROM HOT-ELECTRONS IN SI-INVERSION LAYERS

被引：19

作者：

GORNIK, E ^{[1
]}

TSUI, DC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 01期

关键词：

D O I：

10.1016/0038-1101(78)90127-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：139 / 142

页数：4

共 9 条

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[4]

GORNIK E, UNPUBLISHED

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[7] A HIGH-DETECTIVITY GALLIUM-DOPED GERMANIUM DETECTOR FOR 40-120MU REGION [J].

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[8] TRANSMISSION OF ISOTROPIC RADIATION ACROSS INTERFACE BETWEEN 2 DIELECTRICS [J].

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[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

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