HIGH-POWER OPERATION OF MULTIQUANTUM-WELL DFB LASERS AT 1.3-MU-M

被引：8

作者：

CHEN, TR

CHEN, PC

UNGAR, J

BARCHAIM, N

机构：

[1] Ortel Corporation, CA 91803, 2015 W. Chestnut St., Alhambra

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 16期

关键词：

DISTRIBUTED FEEDBACK LASERS; SEMICONDUCTORS QUANTUM WELLS;

D O I：

10.1049/el:19950894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

130mW CW singlemode operation of an InGaAsP/InP strained multiquantum well DFB laser at 1.3 mu m is reported. The laser showed low threshold current, high quantum efficiency and very good linearity.

引用

页码：1344 / 1345

页数：2

共 5 条

[1]

BLAUVELT H, 1993, TRENDS OUTPUT POWER, P385

[2]

BORCHERT B, 1994, 14TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, P47, DOI 10.1109/ISLC.1994.518912

[3]

LU H, 1994, 14TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, P51, DOI 10.1109/ISLC.1994.518914

[4] HIGH-PERFORMANCE LAMBDA= 1.3 MU-M INGAASP-INP STRAINED-LAYER QUANTUM-WELL LASERS [J].

THIJS, PJA ;

VANDONGEN, T ;

TIEMEIJER, LF ;

BINSMA, JJM .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1994, 12 (01) :28-37

[5] SUBMILLIAMP THRESHOLD CURRENT (0.62 MA AT 0-DEGREES-C) AND HIGH OUTPUT POWER (220 MW) 1.5 MU-M TENSILE STRAINED INGAAS SINGLE QUANTUM-WELL LASERS [J].

THIJS, PJA ;

BINSMA, JJM ;

TIEMEIJER, LF ;

VANDONGEN, T .

ELECTRONICS LETTERS, 1992, 28 (09) :829-830

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