DRIFT AND CONDUCTIVITY MOBILITY IN SILICON

被引：190
作者：
LUDWIG, GW
WATTERS, RL
机构：
来源：
PHYSICAL REVIEW | 1956年 / 101卷 / 06期
关键词：
D O I：
10.1103/PhysRev.101.1699
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1699 / 1701
页数：3
相关论文
共 7 条
[1]   THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].
HAYNES, JR ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1951, 81 (05) :835-843
[2]   THE TEMPERATURE DEPENDENCE OF DRIFT MOBILITY IN GERMANIUM [J].
LAWRANCE, R .
PHYSICAL REVIEW, 1953, 89 (06) :1295-1295
[3]  
MORIN RJ, 1954, PHYS REV, V96, P29
[4]   DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J].
PRINCE, MB .
PHYSICAL REVIEW, 1954, 93 (06) :1204-1206
[5]   EXPERIMENTAL CONFIRMATION OF RELATION BETWEEN PULSE DRIFT MOBILITY AND CHARGE CARRIER DRIFT MOBILITY IN GERMANIUM [J].
PRINCE, MB .
PHYSICAL REVIEW, 1953, 91 (02) :271-272
[6]   THE TRANSPORT OF ADDED CURRENT CARRIERS IN A HOMOGENEOUS SEMICONDUCTOR [J].
VANROOSBROECK, W .
PHYSICAL REVIEW, 1953, 91 (02) :282-289
[7]  
WATTERS RL, UNPUBLISHED
1