A GENERAL 4-TERMINAL CHARGING-CURRENT MODEL FOR THE INSULATED-GATE FIELD-EFFECT TRANSISTOR .1.

被引：18
作者：
ROBINSON, JA
ELMANSY, YA
BOOTHROYD, AR
机构：
[1] INTEL CORP,ALOHA,OR 97005
[2] CARLETON UNIV,DEPT ELECTR,OTTAWA K1S 5B6,ONTARIO,CANADA
来源：
SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 05期
关键词：
D O I：
10.1016/0038-1101(80)90074-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：405 / 410
页数：6
相关论文
共 8 条
[1]   NONLINEAR INDEFINITE ADMITTANCE MATRIX FOR MODELING ELECTRONIC DEVICES [J].
ARREOLA, JI ;
LINDHOLM, FA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) :765-767
[2]  
COBBOLD RSC, 1970, THEORY APPLICATIONS, pCH8
[3]   NEW APPROACH TO THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].
ELMANSY, YA ;
BOOTHROYD, AR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :241-253
[4]   A GENERAL FORMULATION OF THE PARAMETERS OF THE EQUIVALENT-CIRCUIT MODEL OF THE IGFET .2. [J].
ELMANSY, YA ;
BOOTHROYD, AR .
SOLID-STATE ELECTRONICS, 1980, 23 (05) :411-414
[5]   MOS-DEVICE MODELING FOR COMPUTER IMPLEMENTATION [J].
JENKINS, FS ;
LANE, ER ;
LATTIN, WW ;
RICHARDSON, WS .
IEEE TRANSACTIONS ON CIRCUIT THEORY, 1973, CT20 (06) :649-658
[6]   A SYSTEMATIC MODELING THEORY FOR SOLID STATE DEVICES [J].
LINDHOLM, FA ;
HAMILTON, DJ .
SOLID-STATE ELECTRONICS, 1964, 7 (11) :771-783
[7]   UNIFIED MODELING OF FIELD-EFFECT DEVICES [J].
LINDHOLM, FA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1971, SC 6 (04) :250-+
[8]  
ROBINSON JA, 1977, THESIS CARLETON U OT
1