EFFECT OF INTERFACE ARSENIC DOMAINS ON ELECTRICAL-PROPERTIES OF GAAS MOS STRUCTURES

被引：39

作者：

CHANG, RPH

SHENG, TT

CHANG, CC

COLEMAN, JJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 04期

关键词：

D O I：

10.1063/1.90329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：341 / 342

页数：2

共 12 条

[1] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].

CHANG, CC ;

SCHWARTZ, B ;

MURARKA, SP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926

[2]

CHANG CC, 1978, J ELCHEM SO, V125, P482

[3]

CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[4]

CHANG RK, UNPUBLISHED

[5] PLASMA OXIDATION OF GAAS [J].

CHANG, RPH ;

SINHA, AK .

APPLIED PHYSICS LETTERS, 1976, 29 (01) :56-58

[6] PLASMA OXIDATION OF ALUMINUM FILM ON GAAS - STUDY BY AUGER-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY [J].

CHANG, RPH ;

CHANG, CC ;

SHENG, TT .

APPLIED PHYSICS LETTERS, 1977, 30 (12) :657-659

[7] MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING [J].

CHANG, RPH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :278-280

[8] NEW METHOD OF FABRICATING GALLIUM-ARSENIDE MOS DEVICES [J].

CHANG, RPH ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :332-333

[9] DC PLASMA ANODIZATION OF GAAS [J].

CHESLER, LA ;

ROBINSON, GY .

APPLIED PHYSICS LETTERS, 1978, 32 (01) :60-62

[10] DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING [J].

FARROW, RL ;

CHANG, RK ;

MROCZKOWSKI, S ;

POLLAK, FH .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :768-770

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