INTRINSIC RESPONSE-TIME AND RELATED QUANTITIES DESCRIBING SEMICONDUCTOR AVALANCHES

被引：1

作者：

VANIPEREN, BB ^{[1
]}

GOEDBLOED, JJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 15期

关键词：

D O I：

10.1049/el:19770324

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：448 / 449

页数：2

共 8 条

[1]

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[2]

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GOEDBLOED, JJ .

SOLID-STATE ELECTRONICS, 1972, 15 (06) :635-+

[4] INFLUENCE OF CARRIER DIFFUSION ON INTRINSIC RESPONSE TIME OF SEMICONDUCTOR AVALANCHES [J].

HULIN, R ;

GOEDBLOED, JJ .

APPLIED PHYSICS LETTERS, 1972, 21 (02) :69-+

[5]

Hulin R., 1970, Electronics Letters, V6, P849, DOI 10.1049/el:19700585

[6] AVALANCHE BUILDUP TIME OF SILICON REACH-THROUGH PHOTODIODES [J].

KANEDA, T ;

TAKANASHI, H ;

MATSUMOTO, H ;

YAMAOKA, T .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4960-4963

[7] QUASISTATIC APPROXIMATION FOR SEMICONDUCTOR AVALANCHES [J].

KUVAS, R ;

LEE, CA .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1743-&

[8] NOISE IN GALLIUM-ARSENIDE AVALANCHE READ DIODES [J].

STATZ, H ;

PUCEL, RA ;

SIMPSON, JE ;

HAUS, HA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) :1075-1085

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