SIMULATION OF MICROCRACK EFFECTS IN DISSOLUTION OF POSITIVE RESIST EXPOSED BY X-RAY-LITHOGRAPHY

被引：9
|
作者：
GUERRIERI, R [1 ]
NEUREUTHER, AR [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1988年 / 7卷 / 07期
关键词：
D O I：
10.1109/43.3946
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：755 / 764
页数：10
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