DIRECT OBSERVATIONS OF ION-IMPLANTED XENON MARKER LAYERS IN ANODIC BARRIER FILMS ON ALUMINUM

被引:58
作者
SHIMIZU, K
THOMPSON, GE
WOOD, GC
XU, Y
机构
关键词
D O I
10.1016/0040-6090(82)90054-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:255 / 262
页数:8
相关论文
共 10 条
[1]   USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J].
BROWN, F ;
MACKINTOSH, WD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) :1096-1102
[2]   MIGRATION OF METAL AND OXYGEN DURING ANODIC FILM FORMATION [J].
DAVIES, JA ;
DOMEIJ, B ;
PRINGLE, JPS ;
BROWN, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (07) :675-&
[3]  
DAVIES JA, 1963, J ELECTROCHEM SOC, V110, P84
[4]  
FURNEAUX RC, 1978, CORROS SCI, V18, P835
[5]   TRANSPORT NUMBERS OF METAL AND OXYGEN DURING ANODIC-OXIDATION OF TANTALUM [J].
PRINGLE, JPS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :398-407
[6]  
Shimizu K., UNPUB
[7]  
TAJIMA S, 1970, ADV CORROSION TECHNO, P287
[8]   CARBIDE FORMATION ON NB SURFACES DURING HIGH-TEMPERATURE H IRRADIATION [J].
THOMAS, GJ ;
BAUER, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :490-495
[9]   BEHAVIOR OF IMPLANTED XENON WHEN USED AS A MARKER DURING THE ANODIC-OXIDATION OF ALUMINUM - EVIDENCE FOR AN EXPLANATION OF A DOSE-DEPENDANT SPLITTING EFFECT [J].
THOMAS, JP ;
FALLAVIER, M ;
SPENDER, P ;
FRANCOIS, E .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :585-590
[10]   OBSERVATION OF FLAWS IN ANODIC FILMS ON ALUMINUM [J].
THOMPSON, GE ;
SHIMIZU, K ;
WOOD, GC .
NATURE, 1980, 286 (5772) :471-472