MULTISTEP FUNCTION MOS-TRANSISTOR CIRCUITS

被引：0

作者：

KARASAWA, S

YAMANOUCHI, K

机构：

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 1993年 / E76C卷 / 03期

关键词：

MOSFET; PUNCH-THROUGH EFFECT; QUANTIZING CIRCUIT; MULTIPLE-VALUED FLIP-FLOP;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes operating characteristics of a new device named multi-step function MOS transistor (MSF MOSFET) which has stair-shaped I-V curve caused by a stair-shaped gap between drain and gate. A quantizing inverter is obtained by using only a single MSF MOSFET as a coupling element of an emitter common amplifier. A pair of the quantizing inverters whose input and output are cross-coupled to each other has multi-stable states. This multiple-valued (MV) flip-flop is available for MV registers and MV memories whose states are changeable by an analog input voltage.

引用

页码：357 / 363

页数：7