This paper describes operating characteristics of a new device named multi-step function MOS transistor (MSF MOSFET) which has stair-shaped I-V curve caused by a stair-shaped gap between drain and gate. A quantizing inverter is obtained by using only a single MSF MOSFET as a coupling element of an emitter common amplifier. A pair of the quantizing inverters whose input and output are cross-coupled to each other has multi-stable states. This multiple-valued (MV) flip-flop is available for MV registers and MV memories whose states are changeable by an analog input voltage.
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Korea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South Korea
Samsung Elect, Syst LSI, Yongin 17113, Gyeonggi Do, South KoreaKorea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South Korea
Koo, Bondae
Shin, Gwang Hyuk
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Korea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South Korea
Shin, Gwang Hyuk
Park, Hamin
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Korea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South Korea
Park, Hamin
Kim, Hojn
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Korea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South Korea
Kim, Hojn
Choi, Sung-Yool
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Korea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Graphene Mat Res Ctr 2D, Sch Elect Engn, Daejeon 34141, South Korea
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Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea
Han, Joon-Kyu
Seo, Myungsoo
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Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea
Seo, Myungsoo
Yu, Ji-Man
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Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea
Yu, Ji-Man
Suh, Yoon-Je
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Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea
Suh, Yoon-Je
Choi, Yang-Kyu
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Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea
机构:
Ton Duc Thang Univ, Adv Inst Mat Sci, Computat Opt Res Grp, Ho Chi Minh City, Vietnam
Ton Duc Thang Univ, Fac Appl Sci, Ho Chi Minh City, VietnamUniv Kashan, Inst Nanosci & Nanotechnol, Kashan, Iran