MULTISTEP FUNCTION MOS-TRANSISTOR CIRCUITS

被引：0
|
作者：
KARASAWA, S
YAMANOUCHI, K
机构：
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1993年 / E76C卷 / 03期
关键词：
MOSFET; PUNCH-THROUGH EFFECT; QUANTIZING CIRCUIT; MULTIPLE-VALUED FLIP-FLOP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes operating characteristics of a new device named multi-step function MOS transistor (MSF MOSFET) which has stair-shaped I-V curve caused by a stair-shaped gap between drain and gate. A quantizing inverter is obtained by using only a single MSF MOSFET as a coupling element of an emitter common amplifier. A pair of the quantizing inverters whose input and output are cross-coupled to each other has multi-stable states. This multiple-valued (MV) flip-flop is available for MV registers and MV memories whose states are changeable by an analog input voltage.
引用
收藏
页码：357 / 363
页数：7
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