Silicon oxide film preparation by RF plasma-enhanced MOCVD using hexamethyldisiloxane

被引：12

作者：

Ebihara, Kenji ^{[1
]}

Fujishima, Tomoyuki ^{[1
]}

Kojyo, Daiichi ^{[2
]}

Murata, Masayosi ^{[2
]}

机构：

[1] Kumamoto Univ, Dept Elect Engn & Comp Sci, Kumamoto 860, Japan

[2] Mitsubishi Heavy Ind Ltd, Nagasaki Res & Dev Ctr, Nagasaki 85003, Japan

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1993年 / 2卷 / 01期

关键词：

D O I：

10.1088/0963-0252/2/1/004

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Silicon oxide films were prepared in an RF capacitive plasma using hexamethyldisiloxane. The films deposited on c-Si, quartz plate, glass and polycarbonate at room temperature were studied by means of IR absorption, ESCA and optical transmission spectra. The processing plasmas were also monitored spectroscopically.

引用

页码：14 / 17

页数：4

共 5 条

[1] ION AND CHEMICAL RADICAL EFFECTS ON THE STEP COVERAGE OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION TETRAETHYLORTHOSILICATE FILMS
CHANG, CP
PAI, CS
HSIEH, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) : 2119 - 2126
[2] EBIHARA K, 1990, P JAP CHIN KOR TRIL, P166
[3] KASHIWAGI K, 1989, P 9 INT S PLASM CHEM, P1218
[4] PLASMA-ENHANCED CHEMICALLY VAPOUR-DEPOSITED SILICON DIOXIDE FOR METAL-OXIDE-SEMICONDUCTOR STRUCTURES ON INSB
MACKENS, U
MERKT, U
[J]. THIN SOLID FILMS, 1982, 97 (01) : 53 - 61
[5] NGUYEN S, 1989, P 9 INT S PLASM CHEM, P1134

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