THERMAL-DECOMPOSITION OF SNS2 AND SNSE2 - NOVEL MOLECULAR-BEAM EPITAXY SOURCES FOR SULFUR AND SELENIUM

被引：49

作者：

SHIMADA, T ^{[1
]}

OHUCHI, FS ^{[1
]}

PARKINSON, BA ^{[1
]}

机构：

[1] DUPONT CO,DEPT CENT RES & DEV,EXPTL STN,WILMINGTON,DE 19898

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 03期

关键词：

D O I：

10.1116/1.578184

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

New sources of selenium and sulfur for UHV preparation of thin films are described. These sources, utilizing the high temperature thermal decomposition of SnSe2 and SnS2, are bakeable to at least 300-degrees-C providing much more convenience than element Se and S sources. The thermal decomposition is studied with thermal gravitometry, mass spectrometry, and x-ray photoemission spectroscopy. The utility of the sources is demonstrated by the epitaxial growth of TiSe2 on MoS2.

引用

页码：539 / 542

页数：4

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