STUDY OF PLASMON-LO-PHONON COUPLING IN TE-DOPED GA1-XALXAS

被引：39

作者：

KIM, OK ^{[1
]}

SPITZER, WG ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

PHYSICAL REVIEW B | 1979年 / 20卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.20.3258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Plasmon-LO-phonon coupling in n-type Ga1-xAlxAs has been investigated by measuring the infrared reflectivity spectra of differently doped n-type samples having x0.14, x0.30, and x0.46. Two expressions for the dielectric function, one an additive form and the other a factorized form, have given satisfactory fits to the reflectivity data. The mode frequencies and damping rates in the plasmon-LO-phonon coupled mode systems are calculated and compared with the observed ones for the samples having x0.14 and x0.46. The -point conduction-band effective mass for x0.14 is found to be m*=(0.13±0.01)me and the resistivity obtained from the infrared spectra is approximately 30% higher than the value from dc measurements. The reflectivity minima are broadened by the large plasma damping in the samples having x0.46. © 1979 The American Physical Society.

引用

页码：3258 / 3266

页数：9

共 33 条

[1] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].