SILICON MOLECULAR-BEAM EPITAXY - STATUS - DEVICES - TRENDS

[1] BEAN JC, 1988, 2ND P INT S SI MBE

[2] IYER S, 1988, 2ND P INT S SI MBE

[3] KASPER E, UNPUB PHYS REV B

[4] KASPER E, UNPUB HETEROSTRUCTUR

[5] MONOLITHICALLY INTEGRATED COPLANAR 75-GHZ SILICON IMPATT OSCILLATOR [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1988, 1 (04) : 117 - 119

[6] LUY JF, UNPUB

[7] NAROZNY P, UNPUB

[8] PARKER EHC, 1987, PRACTICE TECHNOLOGY

[9] PHILLIPS J, 1988, SPR MRS M

[10] SI/GE0.3SI0.7/SI HETEROJUNCTION BIPOLAR-TRANSISTOR MADE WITH SI MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (11) : 895 - 897

[1] BEAN JC, 1988, 2ND P INT S SI MBE

[2] IYER S, 1988, 2ND P INT S SI MBE

[3] KASPER E, UNPUB PHYS REV B

[4] KASPER E, UNPUB HETEROSTRUCTUR

[5] MONOLITHICALLY INTEGRATED COPLANAR 75-GHZ SILICON IMPATT OSCILLATOR [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1988, 1 (04) : 117 - 119

[6] LUY JF, UNPUB

[7] NAROZNY P, UNPUB

[8] PARKER EHC, 1987, PRACTICE TECHNOLOGY

[9] PHILLIPS J, 1988, SPR MRS M

[10] SI/GE0.3SI0.7/SI HETEROJUNCTION BIPOLAR-TRANSISTOR MADE WITH SI MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (11) : 895 - 897